focused helium-ion beam (Koehler Instrument)
90
Structured Review
Koehler Instrument
focused helium-ion beam
Focused Helium Ion Beam, supplied by Koehler Instrument, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+helium-ion+beam/focused+helium+ion+beam/pm40296726-257-37-19
Average 90 stars, based on 1 article reviews
Focused Helium Ion Beam, supplied by Koehler Instrument, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/focused+helium-ion+beam/focused+helium+ion+beam/pm40296726-257-37-19
Average 90 stars, based on 1 article reviews
focused helium-ion beam - by Bioz Stars,
2026-09
90/100 stars
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other:Article Title: Quantification of defects engineered in single layer MoS2 Article Snippet: 26 Article Title: Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography. Article Snippet: Hybrid metal-organic cluster resist materials, also termed organo-inorganics, demonstrate their potential for use in next-generation lithography owing to their ability for patterning down to ~10 nm or beyond.. High-resolution resist patterning is integrally associated with the compatibility of the resist and irradiation of the exposure source.. Helium ion beam lithography (HIBL) is an emerging approach for the realization of sub-10 nm patterns at considerably lower line-edge/width roughness (LER/LWR) and higher sensitivity as compared to electron beam lithography (EBL). Article Title: Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe 2 Layers by Plasma-Driven Chalcogen Defect Engineering. Article Snippet: is published by the American Chemical Society.. 1155 Sixteenth Street N.W., Washington, DC 20036 Published by American Chemical Society.. Copyright © American Chemical Society. Article Title: Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides. Article Snippet: Among p−n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2− WSe2−MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2− WSe2 (NP) structure.. The ideality factor of the NPN structure was estimated to be ∼1, lower than that of the NP structure.. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Article Title: Dose-dependent effect of proton irradiation on electrical properties of WSe 2 ambipolar field effect transistors. Article Snippet: Please note that technical editing may introduce minor changes to the text and/or graphics, which may alter content.. The journal’s standard Terms & Conditions and the Ethical guidelines still apply.. In no event shall the Royal Society of Chemistry be held responsible for any errors or omissions in this Accepted Manuscript or any consequences arising from the use of any information it contains. Article Title: Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS 2 Stack. Article Snippet: Article Title: NaCl-Assisted One-Step CVD for In-Plane 1T/1H Heterophase Homojunctions in Monolayer WS 2 . Article Snippet: Two-dimensional WS2 offers promising advantages for various applications due to its semiconducting 1H phase and metallic 1T phase.. However, the instability of the 1T phase and the difficulty of achieving a stable phase coexistence present significant challenges.. Here, we adopt the NaCl-assisted one-step chemical vapor deposition method that enables the spatial coexistence and precise control of 1H and 1T phases within monolayer WS2. Article Title: Extraordinary Radiation Hardness of Atomically Thin MoS 2 . Article Snippet: We demonstrate that atomically thin layered two-dimensional (2D) semiconductors are promising candidates for space electronics owing to their inherent and extraordinary resilience to radiation damage from energetic heavy charged particles.. In particular, we found that ultrathin MoS2 nanosheets can easily withstand proton and helium irradiation with fluences as high as ~1016 ions/cm2 and ~1015 ions/cm2, respectively, corresponding to hundreds or thousands of years of unshielded exposure to radiation in space.. While radiation effects on 2D material-based field effect transistors (FETs) have been reported in the recent past, none of these studies could isolate the impact of irradiation on standalone ultrathin 2D layers. |
